Chip to Chip Interconnect in Encapsulant of Molded Semiconductor Package

ABSTRACT

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

RELATED APPLICATIONS

This application is a divisional of and claims priority to U.S.application Ser. No. 16/375,479 filed Apr. 4, 2019, the content of whichis incorporated by reference in its entirety.

TECHNICAL FIELD

Embodiments of this invention relate to a semiconductor package and themethods thereof.

BACKGROUND

A prevalent trend in semiconductor applications is to reduce the size ofa particular semiconductor device and/or increase the functionalcapability of a particular semiconductor device without increasing itssize. This scaling trend results in semiconductor dies with denselyarranged bond pads. These semiconductor dies create design challengeswith respect to device packaging. In particular, packaging solutionsthat provide unique electrical connections for each terminal of asemiconductor die with densely arranged bond pads create challenges.Conventional packaging interconnect structures, such as bond wires,clips, ribbons, etc., may be ineffective and/or performance limiting forthese electrical connections.

SUMMARY

A packaged semiconductor device is disclosed. According to anembodiment, the packaged semiconductor device includes an electricallyinsulating encapsulant body having an upper surface, a firstsemiconductor die encapsulated within the encapsulant body, the firstsemiconductor die having a main surface with a first conductive pad thatfaces the upper surface of the encapsulant body, a second semiconductordie encapsulated within the encapsulant body and disposed laterally sideby side with the first semiconductor die, the second semiconductor diehaving a main surface with a second conductive pad that faces the uppersurface of the encapsulant body, and a first conductive track that isformed in the upper surface of the encapsulant body and electricallyconnects the first conductive pad to the second conductive pad. Theencapsulant body includes a laser activatable mold compound.

Separately or in combination, a first vertical interconnect structure isdisposed on the first conductive pad, and a second vertical interconnectstructure that is disposed on the second conductive pad, the first andsecond conductive pads are covered by material of the encapsulant body,and the first and second vertical interconnect structures each compriseouter ends that are exposed from the encapsulant body at the uppersurface

Separately or in combination, the first conductive track directlyconnects with the outer ends of the first and second verticalinterconnect structures.

Separately or in combination, the first vertical interconnect structureis a wire stud bump that is attached to the first conductive pad.

Separately or in combination, the second vertical interconnect structureis a metal pillar that is attached to the second conductive pad.

Separately or in combination, a second conductive track is formed in theupper surface of the encapsulant body, and the second conductive trackis formed in a second laser activated region of the laser activatablemold compound.

Separately or in combination, the main surface of the firstsemiconductor die comprises a third conductive pad, the main surface ofthe second semiconductor die comprises a fourth conductive pad, and thesecond conductive track electrically connects the third conductive padto the fourth conductive pad.

Separately or in combination, the first conductive track comprises anelongated span that extends in a first direction, the second conductivetrack comprises an elongated span that extends in a second direction,and the first and second directions are angled relative to one another.

Separately or in combination, a protective layer that covers the firstconductive track, and the protective layer comprises an electricallyinsulating material different from the laser activatable mold compound.

Separately or in combination, the packaged semiconductor device furthercomprises a die paddle and a plurality of electrically conductive leadsextending away from the die paddle, the first and second semiconductordies are mounted on laterally adjacent regions of the die paddle, andthe upper surface of the encapsulant body is opposite from the diepaddle.

Separately or in combination, the first and second semiconductor diesare laterally separated from one another by a gap, a first portion ofthe encapsulant body fills the gap, and the first conductive track isformed on the first portion of the encapsulant body.

A method of forming a packaged semiconductor device is disclosed.According to an embodiment of the method, a first semiconductor die thatcomprises a main surface with a first conductive pad is provided, asecond semiconductor die that comprises a main surface with a secondconductive pad is provided, the first and second semiconductor dies areencapsulated such that the second semiconductor die is disposedlaterally side by side with the first semiconductor die and such thatthe main surfaces of the first and second semiconductor dies each facean upper surface of the encapsulant body, and a first conductive trackin the upper surface of the encapsulant body that electrically connectsthe first conductive pad to the second conductive pad is formed. Theencapsulant body includes a laser activatable mold compound. The firstconductive track is formed in a first laser activated region of thelaser activatable mold compound.

Separately or in combination, forming the first conductive trackcomprises directing a laser on the laser activatable mold compoundthereby forming the first laser activated region, and performing aplating process that forms conductive material in the first laseractivated region.

Separately or in combination, the plating process is an electrolessliquid plating process.

Separately or in combination, the method further includes providing afirst vertical interconnect structure on the first conductive pad beforethe encapsulating, providing a second vertical interconnect structure onthe second conductive pad before the encapsulating, the encapsulatingcovers the first and second conductive pads with material of theencapsulant body, and after the encapsulating, outer ends of the firstand second vertical interconnect structures are exposed at the uppersurface of the encapsulant body.

Separately or in combination, the encapsulating of the first and secondsemiconductor dies comprises completely covering the first verticalinterconnect structures with material of the encapsulant body, and themethod further comprises performing a thinning process after theencapsulating, and the thinning process removes material from the uppersurface of the encapsulant body until the outer ends of the first andsecond vertical interconnect structures are exposed from the encapsulantbody

Separately or in combination, encapsulating the first and secondsemiconductor dies comprises an injection molding process, and theinjection molding process comprises using an injection cavity that isdimensioned to cover the main surfaces of the first and secondsemiconductor chips with liquified molding material while exposing theouter ends of the first and second vertical interconnect structures fromthe liquified molding material.

Separately or in combination, the first conductive track is formed todirectly connect with the outer ends of the first and second verticalinterconnect structures.

Separately or in combination, the method further includes forming aprotective layer that covers the first conductive track, and theprotective layer comprises an electrically insulating material differentfrom the laser activatable mold compound.

Separately or in combination, the method further includes providing adie paddle with a plurality of electrically conductive leads extendingaway from the die paddle, attaching a lower surface of the firstsemiconductor die that is opposite from the main surface of the firstsemiconductor die to a first lateral region of the die paddle, attachinga lower surface of the second semiconductor die that is opposite fromthe main surface of the second semiconductor die to a second lateralregion of the die paddle that is laterally adjacent to the first lateralregion, and the upper surface of the encapsulant body is opposite fromthe die paddle.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE FIGURES

The elements of the drawings are not necessarily to scale relative toeach other. Like reference numerals designate corresponding similarparts. The features of the various illustrated embodiments can becombined unless they exclude each other. Embodiments are depicted in thedrawings and are detailed in the description which follows.

FIG. 1, which includes FIGS. 1A and 1B, illustrates initial steps in amethod of forming a packaged semiconductor device. FIG. 1A illustratesproviding a carrier, and FIG. 1B illustrates mounting first and secondsemiconductor dies on a die attach surface of the carrier.

FIG. 2 illustrates providing vertical interconnect structures onconductive bond pads of the first and second semiconductor dies.

FIG. 3, which includes FIGS. 3A and 3B, illustrates various embodimentsof a raised conductive conductor that can be provided on the conductivebond pads. FIG. 3A illustrates a wire stud bump configuration, and FIG.3B illustrates a metal pillar configuration.

FIG. 4 illustrates forming an encapsulant body that encapsulates thesemiconductor dies and exposes outer ends of the vertical interconnectstructures at an upper surface.

FIG. 5 illustrates performing a laser activation process that formslaser activated regions in the upper surface of the encapsulant body.

FIG. 6 illustrates performing a plating process that forms conductivetracks in the laser activated regions of the encapsulant body.

FIG. 7 illustrates forming a protective layer on the conductive tracksformed in the laser activated regions of the encapsulant body.

DETAILED DESCRIPTION

The embodiments described herein provide a semiconductor package with awiring layer formed in a top side of the encapsulant body. In anembodiment, the top side wiring layer is used to electrically connecttwo or more encapsulated semiconductor dies together. The top sidewiring layer can be provided by conductive tracks that are formed bylaser patterning technique. According to this technique, the encapsulantbody includes a laser-activatable mold compound. A laser beam is appliedto the laser-activatable mold compound, thereby forming laser-activatedregions along defined tracks. These laser-activated regions provide aseed for a subsequent plating process that forms conductive tracks onthe encapsulant body. These conductive tracks can be used in combinationwith raised conductive connections, e.g., bumps, pillars etc., toprovide complete electrical connections between the bond pads ofencapsulated semiconductor dies. Additionally, due to the highresolution and geometric flexibility of the laser patterning technique,the top side wiring layer described herein offers high densityinterconnect capability that can be combined with existing interconnecttechniques to meet the interconnect requirements of modern semiconductordevices. Additionally, the conductive tracks can advantageously be usedto provide logical interconnect between two dies of lowercurrent/voltage signals, whereas high current/voltage signals, e.g.,power signal, can be distributed by thicker leads of the packageddevice.

Referring to FIG. 1, a carrier structure 100 is depicted, according toan embodiment. In this embodiment, the carrier structure 100 is providedby a lead frame, wherein the lead frame includes a centrally located diepaddle 102 and a plurality (i.e., two or more) of electricallyconductive leads 104 that extend away from the die paddle 102. The diepaddle 102 includes a planar die attach surface 106 that accommodatesthe mounting of one or more semiconductor dies thereon. According to anembodiment, the die paddle 102 is integrally connected with some of theleads 104 and thus provides a connection point for a terminal of asemiconductor die. Generally speaking, the carrier structure 100 caninclude conductive metals, such as copper, aluminum, etc., and alloysthereof.

Referring to FIG. 1A, first and second semiconductor dies 108, 110 areprovided on the carrier structure 100. Generally speaking, the first andsecond semiconductor dies 108, 110 can have a wide variety of deviceconfigurations. These device configurations include discrete deviceconfigurations, such as HEMT (high electron mobility transistor)devices, diodes, thyristors, etc. These device configurations alsoinclude integrated device configurations, such as controllers,amplifiers, etc. These device configurations can include verticaldevices, i.e., devices which conduct in a direction perpendicular to themain and rear surfaces of the die, and lateral devices, i.e., deviceswhich conduct in a direction parallel to the main surface of the die.

The first and second semiconductor dies 108, 110 each have a mainsurface 112, a rear surface 114 (See FIG. 7) that is opposite from themain surface 112, and outer edge sides 116 extending between the mainand rear surfaces 112, 114. The main surface 112 of the firstsemiconductor die 108 includes a first electrically conductive bond pad118. The main surface 112 of the second semiconductor die 110 includes asecond electrically conductive bond pad 120. In the depicted embodiment,the main surface 112 of the first semiconductor die 108 additionallyincludes a third electrically conductive bond pad 122, and the mainsurface 112 of the second semiconductor die 110 additionally includes afourth electrically conductive bond pad 124. These bond pads provideterminal connections (e.g., gate, source, emitter, collector, logicalterminals, etc.) for the devices incorporated into the first and secondsemiconductor dies 108, 110. More generally, the number, size andconfiguration of bond pads may vary. Optionally, the rear surfaces 114of the first and/or second semiconductor die 108, 110 may includesimilarly configured bond pads that provide terminal connections for therespective device.

The second semiconductor die 110 is arranged laterally side by side withthe first semiconductor die 108. This means that the outer edge side 116of the second semiconductor die 110 faces the outer edge side 116 of thefirst semiconductor die 108. Hence, the first and second semiconductordies 108, 110 are next to one another in a lateral direction. Thelateral direction refers to a direction that is parallel to the main andrear surfaces 112, 114 of the semiconductor dies 108, 110. As shown, thefirst and second semiconductor dies 108, 110 are laterally separatedfrom one another by a gap. In other configurations, the first and secondsemiconductor dies 108, 110 can be flush or close to flush against oneanother.

The first and second semiconductor dies 108, 110 are mounted onlaterally adjacent regions of the die attach surface 106. In thisconfiguration, the rear surface 114 of the first semiconductor die 108faces and is directly attached to a first region of the die attachsurface 106, and the rear surface 114 of the second semiconductor die110 faces and is directly attached to a second region of the die attachsurface 106 that is laterally spaced apart from the first region. Therear surfaces 114 of each semiconductor die 108, 110 can be directlyattached to the carrier by an adhesive, e.g., solder, conductive glue,etc.

Referring to FIG. 2, vertical interconnect structures 126 are providedon the conductive pads of the first and second semiconductor dies 108,110. These vertical interconnect structures 126 vertically extend abovethe main surfaces 112 of the first and second semiconductor dies 108,110, and thus represent an uppermost contact surface for the mountedsemiconductor dies 108, 110. Various examples of these verticalinterconnect structure are shown in more detail in FIG. 3. The verticalinterconnect structures 126 can be attached to the bond pads aftermounting the semiconductor dies 108, 110 on the die paddle 102.Alternatively, the vertical interconnect structures 126 can be providedon the bond pads before mounting the semiconductor dies 108, 110 on thedie paddle 102. Before the encapsulation step to be described below,electrical connections (not shown) between the leads 104 and bothsemiconductor dies 108, 110 can be provided using known techniques, suchas wire bonding

Referring to FIG. 3A, the vertical interconnect structure 126 can beconfigured as a wire stud bump. These wire stud bumps are made from anelectrically conductive material, e.g., copper, gold, aluminium, nickel,etc., and alloys thereof. These structures are formed by depositingsmall drops of liquified metal on the bond pads. As shown, the verticalinterconnect structures 126 include a number of bumps (balls) depositedsuccessively on top of another.

Referring to FIG. 3B, the vertical interconnect structure 126 can beconfigured as a metal pillar. These metal pillars are made from anelectrically conductive metal, e.g., copper, gold, aluminium, nickel,etc., and alloys thereof.

More generally, the vertical interconnect structures 126 can be providedby any conductive structure which can be attached to bond pads toprovide a vertical extension past the main surface 112 of thesemiconductor die.

Referring again to FIG. 2, the vertical interconnect structures 126provided on the bond pads 118, 122 of the first semiconductor die 108can have any of the above described configurations. Likewise, thevertical interconnect structures 126 provided on the bond pads 120, 124of the second semiconductor die 120 can have any of the above describedconfigurations and may have a configuration different from those of thefirst semiconductor die 108.

Referring to FIG. 4, an electrically insulating encapsulant body 128 isformed. The encapsulant body 128 is an electrically insulating structurethat seals and protects the semiconductor dies and associated electricalconnections, e.g., wire bonds (not shown) between the semiconductor dies108, 110 and the leads 104. For example, the encapsulant body 128 caninclude a wide variety of electrically insulating materials such asceramics, epoxy materials and thermosetting plastics, to name a few. Atleast a portion of the electrically insulating encapsulant body 128includes a laser-activatable mold compound. As used herein, a“laser-activatable mold compound” refers to a mold compound thatincludes at least one additive, e.g., in the form of an organic metalcomplex which is activated by a physio-chemical reaction induced by afocused laser beam. In addition to the additive, a “laser-activatablemold compound” includes a polymer material as a base material. Examplesof these polymers include thermoset polymers having a resin base, ABS(acrylonitrile butadiene styrene), PC/ABS (polycarbonate/acrylonitrilebutadiene styrene), PC (polycarbonate), PA/PPA(polyimide/polyphthalamide), PBT (polybutylene terephthalate), COP(cyclic olefin polymer), PPE (polyphenyl ether), LCP (liquid-crystalpolymer), PEI (polyethylenimine or polyaziridine), PEEK (polyether etherketone), PPS (polyphenylene sulfide), etc.

The encapsulant body 128 can be formed using any of a variety of knowntechniques, such as injection molding, transfer molding, compressionmolding, etc. The material of the encapsulant body 128 is formed tocompletely encapsulate, i.e., cover and surround, the semiconductor dies108, 110 and associated electrical connections between the semiconductordies 108, 110 and leads 104. In the case that the semiconductor dies108, 110 are separated from one another by a lateral gap (e.g., as shownin FIG. 2) the encapsulant body 128 can be formed to completely fillthis gap.

The encapsulant body 128 includes an upper surface 130. The encapsulantbody 128 is formed such that the main surfaces 112 of the first andsecond semiconductor dies 108, 110 are completely covered by encapsulantmaterial. Put another way, a thickness of encapsulant material isprovided between the main surfaces 112 of the first and secondsemiconductor dies 108, 110 and the upper surface 130 of the encapsulantbody 128. Hence, the main surfaces 112 of the first and secondsemiconductor dies 108, 110 (not shown in FIG. 4) face the upper surface130 of the encapsulant body 128.

The encapsulant body 128 is formed such that outer ends 132 of thevertical interconnect structures 126, are exposed from the encapsulantmaterial at the upper surface 130 of the encapsulant body 128. Thismeans that the conductive material of the vertical interconnectstructures 126 is physically accessible at the upper surface 130 of theencapsulant body 128.

One technique for forming the encapsulant body 128 such that the outerends 132 of the vertical interconnect structures 126 are exposed at theupper surface 130 of the encapsulant body 128 is as follows. In someembodiments, initially, the encapsulant body 128 is formed to completelycover the vertical interconnect structures 126 with encapsulantmaterial. That is, a thickness of the encapsulant body 128 between themain surfaces 112 of the semiconductor dies 108, 110 and the uppersurface 130 is selected to be greater than a height of the verticalinterconnect structures 126. Subsequently, a thinning process isperformed to remove encapsulant material at the upper surface 130 untilthe outer ends 132 of the vertical interconnect structures 126 areexposed from the encapsulant body 128. This thinning can be doneaccording to known planarization techniques, e.g., polishing, grinding,etching, etc. In another example, the encapsulant material can beremoved by a laser. This laser thinning technique can also provide thelaser activation process to be described in further detail below.

Another technique for forming the encapsulant body 128 such that theouter ends 132 of the vertical interconnect structures 126 are exposedat the upper surface 130 of the encapsulant body 128 is as follows. Theprocess for forming the encapsulant body 128 is controlled such that thecompleted encapsulant body 128 exposes the outer ends 132 of thevertical interconnect structures 126. Put another way, a thickness ofthe encapsulant material between the main surfaces 112 of thesemiconductor dies 108, 110 and the upper surface 130 of the encapsulantbody 128 is selected to be less than a height of the verticalinterconnect structures 126 above the bond pads. In one example of thistechnique, the encapsulant body 128 is formed by an injection moldingprocess which utilizes an injection cavity that is dimensioned to coverthe main surfaces of the first and second semiconductor dies 108, 110with liquified molding material without covering the outer ends 132 ofthe vertical interconnect structures 126. After performing this initialinjection molding process, further processing steps may be performed.These steps may include cleaning steps, planarization steps to planarizethe exposed outer ends 132 of the vertical interconnect structures 126and/or further molding steps to form additional portions of theencapsulant body 128.

Referring to FIG. 5, a laser activation process is performed on theupper surface 130 of the encapsulant body 128. The laser activationprocess includes directing a laser beam on the laser-activatable moldcompound that is present at the upper surface 130 of the encapsulantbody 128. The energy from the laser beam creates laser-activated regions134 in the encapsulant body 128. As used herein, a “laser-activatedregion” refers to a region of laser-activatable mold compound hasreacted with a laser beam such that organic metal complexes are presentat the surface of the laser-activatable mold compound and are capable ofacting as a nuclei for metal plating process, examples of which will bedescribed in further detail below. By contrast, the portions of thelaser-activatable mold compound that are not exposed to a laser beam donot have exposed metal complexes that are capable of acting as a nucleiduring a metal plating process.

Referring to FIG. 6, a plating process is performed on the semiconductordevice. The plating process forms conductive material in thelaser-activated regions 134 of the mold compound without substantiallyforming the conductive material in inactivated regions of thelaser-activatable mold compound. This means that the vast majority ofmetal (e.g., greater than 95%, 99% etc.) formed by the plating processforms in the laser-activated regions 134. Moreover, the conductivematerial formed in the laser-activated regions 134 forms a defined,conductive track that is capable of carrying an electrical current.

Generally speaking, the plating process may be any metal plating processthat utilizes a seed metal as a basis for depositing metal thereon. Inone example, the plating process is an electroless liquid platingprocess. According to this technique, the semiconductor device issubmerged in a chemical bath that contains metal ions (e.g., Cu+ ions,Ni+ ions, Ag+ ions, etc.) that react with the organic metal complexes inthe later activated regions, thereby forming a complete layer of theelement from the chemical bath. The plating process may begin with acleaning step to remove laser debris and may be followed by an additivebuild-up of plated metal using the chemical bath. Optionally, additionalmetal coatings e.g., coatings containing Ni, Au, Sn, Sn/Pb, Ag, Ag/Pd,etc., may be applied on the deposited metal after the plating process.

As a result of the laser activation and plating steps described above, anumber of conductive tracks 136 are formed in the laser-activatedregions 134 of the laser-activatable mold compound. These conductivetracks 136 can be used to provide electrical connections between theterminals of semiconductor dies encapsulated within the encapsulant body128. As shown, the conductive tracks 136 are formed to extend across theportion of the encapsulant material that fills the gap between the firstand second semiconductor dies 108, 110 and thus provide a lateralelectrical connection mechanism. More generally, these conductive tracks136 can be formed in any location of the encapsulant body 128 thatincludes laser-activatable mold compound.

According to an embodiment, a first one 138 of the conductive tracks 136electrically connects the first conductive pad 118 of the firstsemiconductor die 108 (shown in FIG. 2) to the second conductive pad 120of the second semiconductor die 110 (shown in FIG. 2). In this case, thefirst one 138 of the conductive tracks 136 forms an electricalconnection between a first one 142 of the vertical interconnectstructures 126 that is disposed on the first conductive pad 118 and asecond one 144 of the vertical interconnect structures 126 that isdisposed on the second conductive pad 120. Similarly, a second one 140of the conductive tracks 136 forms an electrical connection between athird one 146 of the vertical interconnect structures 126 that isdisposed on the third conductive pad 122 (shown in FIG. 2) and a fourthone 148 of the vertical interconnect structures 126 that is disposed onthe fourth conductive pad 124 (shown in FIG. 2). In the depictedembodiment, these conductive tracks 136 form a complete electricalconnection between the exposed outer ends 132 of two verticalinterconnect structures 126. Alternatively, other conductive structures(e.g., bond wires, clips, via structures, etc.) can be part of anelectrical connection the exposed outer ends 132 of two verticalinterconnect structures 126.

More generally, any number of the conductive tracks 136 can be formed inthe upper surface 130 of the encapsulant body 128 to provide electricalconnections between two or more semiconductor dies encapsulated withinthe encapsulant body 128. These conductive tracks 136 can provideseparate electrical nodes, e.g., in the case of the first and secondones 138, 140 of the conductive tracks 136 as described above, or can bepart of a single electrical node, e.g., for increased current carryingcapability.

Advantageously, the laser structuring technique described herein allowsthe conductive tracks 136 to be formed as narrow width and/or tightpitch structures. As the geometry of the conductive tracks 136 iscorrelated to the width of a laser beam, these structures can be formedat a high degree of resolution. Moreover, the laser technique provides ahigh degree of flexibility with respect to the geometry of theconductive tracks 136. Put another way, in comparison to conventionalmetallization techniques, restrictive ground rules are not needed. In anillustration of this capability, the first one 138 of the conductivetracks 136 in the depicted embodiment includes a first elongated span150 that extends in a first direction, and the second one 140 of theconductive tracks 136 includes a second elongated span 152 that extendsin a second direction that is angled relative to the first direction.That is, the first and second elongated spans 150, 152 are orientednon-parallel to one another, e.g., about perpendicular. More generally,the conductive tracks 136 formed by the laser structuring technique canbe oriented any of a variety of angles, e.g., oblique, acute, etcrelative to one another. Moreover, different conductive tracks 136 canhave different widths, lengths, etc. Moreover, as shown, the conductivetracks 136 can be formed to extend along different planes. For example,the conductive tracks 136 shown in FIG. 5 include inclined regions thatextend from recessed portions over the semiconductor dies to the portionof the encapsulant material that fills the gap between semiconductordies. Advantageously, any of these structures can be formed without theuse of expensive masks.

Referring to FIG. 7, after the conductive tracks 136 are formed in theabove described manner, an optional protective layer 154 can be formedto cover some or all of the conductive tracks 136. Among other things,the protective layer 154 can damage to the conductive tracks 136, e.g.,from moisture, particles, physical handling of the device, etc. Theprotective layer 154 can be formed from an electrically insulatingmaterial that is different from material of the laser-activatable moldcompound. Examples of these materials include epoxy based plastics anddiamond based materials, to name a few.

While a particular lead-frame style package is used in the illustratedembodiments, the laser connection techniques described herein are moregenerally applicable to a wide variety of package types. These packagetypes include flat packages, leaded packages, leadless packages, andsurface mount type packages, to name a few. In any of these examples, alaser-activatable mold compound can be used in part or in whole asencapsulant material and structured according to the techniquesdescribed herein.

The “upper surface” of the encapsulant body as described herein refersto a surface of the encapsulant body that is disposed above one or moresemiconductor dies such that upper surfaces of the covered semiconductordie face the upper surface of the encapsulant body. The “upper surface”of the encapsulant body is not necessarily an outermost exposed surfaceof the packaged device. For example, as shown in the embodiment of FIG.7, the upper surface 130 of the encapsulant body is covered by aprotective layer. Additionally or alternatively, additional layers ofencapsulant material may be formed over at least part of an “uppersurface” of an encapsulant body such that the conductive tracks 136described herein are embedded within encapsulant material.

The term “electrically connected,” “directly electrically connected” andthe like describes a permanent low-impedance connection betweenelectrically connected elements, for example a direct contact betweenthe relevant elements or a low-impedance connection via a metal and/or ahighly doped semiconductor.

As used herein, the terms “having”, “containing”, “including”,“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A packaged semiconductor device, comprising: an electrically insulating encapsulant body comprising an upper surface; a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die comprising a main surface with a first conductive pad that faces the upper surface of the encapsulant body; a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die comprising a main surface with a second conductive pad that faces the upper surface of the encapsulant body; a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad; and a protective layer disposed over the first conductive track, wherein the encapsulant body comprises a laser activatable mold compound; wherein the first conductive track is formed in a first laser activated region of the laser activatable mold compound, wherein the protective layer comprises an electrically insulating material different from the laser activatable mold compound, wherein the protective layer contacts and completely covers an upper surface of the first conductive track.
 2. The packaged semiconductor device of claim 1, further comprising: a first vertical interconnect structure that is disposed on the first conductive pad; and a second vertical interconnect structure that is disposed on the second conductive pad, wherein the first and second conductive pads are covered by material of the encapsulant body, and wherein the first and second vertical interconnect structures each comprise outer ends that are exposed from the encapsulant body at the upper surface.
 3. The packaged semiconductor device of claim 2, wherein the first conductive track directly connects with the outer ends of the first and second vertical interconnect structures.
 4. The packaged semiconductor device of claim 2, wherein the first vertical interconnect structure is a wire stud bump that is attached to the first conductive pad.
 5. The packaged semiconductor device of claim 4, wherein the second vertical interconnect structure is a metal pillar that is attached to the first conductive pad.
 6. The packaged semiconductor device of claim 1, further comprising a second conductive track formed in the upper surface of the encapsulant body, wherein the second conductive track is formed in a second laser activated region of the laser activatable mold compound.
 7. The packaged semiconductor device of claim 6, wherein the main surface of the first semiconductor die comprises a third conductive pad, wherein the main surface of the second semiconductor die comprises a fourth conductive pad, and wherein the second conductive track electrically connects the third conductive pad to the fourth conductive pad.
 8. The packaged semiconductor device of claim 7, wherein the first conductive track comprises an elongated span that extends in a first direction, wherein the second conductive track comprises an elongated span that extends in a second direction, and wherein the first and second directions are angled relative to one another.
 9. The packaged semiconductor device of claim 1, further comprising a die paddle and a plurality of electrically conductive leads extending away from the die paddle, wherein at least one of the first and second semiconductor dies is mounted the die paddle, and wherein the upper surface of the encapsulant body is opposite from the die paddle.
 10. The packaged semiconductor device of claim 1, wherein the first and second semiconductor dies are laterally separated from one another by a gap, wherein a first portion of the encapsulant body fills the gap, and wherein the first conductive track is formed on the first portion of the encapsulant body.
 11. The packaged semiconductor device of claim 1, wherein the main surfaces of the first and second semiconductor dies are each disposed below the upper surface of the encapsulant body.
 12. The packaged semiconductor device of claim 1, wherein the protective layer comprises an epoxy based plastic. 